A 28-nm E-band low noise amplifier with minimum 3.8 dB noise figure.

This paper presents a three-stage E-band low-noise amplifier (LNA) fabricated in a 28-nm Complementary Metal Oxide Semiconductor High-Performance Compact Plus process. The proposed E-band LNA achieves a peak gain of 16.8 dB, exhibiting a gain variation of less than ±0.5 dB across the frequency range of 67.8–90.4 GHz. The measured 3-dB gain bandwidth spans from 64 to 93.8 GHz, and the minimum measured noise figure (NF) is 3.8 dB. By employing a one-stage common-source with a two-stage cascode topology, the proposed E-band LNA demonstrates competitiveness in terms of gain flatness and NF when compared to recently published E-band CMOS LNAs. [ABSTRACT FROM AUTHOR]