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Si-based magnetic tunnel transistor with single CoFe base layer.
- Source :
- Journal of Applied Physics; 11/1/2005, Vol. 98 Issue 9, p094502, 4p, 1 Diagram, 4 Graphs
- Publication Year :
- 2005
-
Abstract
- Magnetic tunnel transistors were prepared on Si(100) substrates by magnetron sputter deposition. By means of spin filtering through a single Co<subscript>90</subscript>Fe<subscript>10</subscript> base layer, magnetocurrent ratios of 53%–55% and high transfer ratios of (1–2)×10<superscript>-4</superscript> for emitter-base bias of 1.5–2 V were obtained at 77 K. The bias dependence of the collector current showed the square-law behavior. From the modified Bell-Kaiser model, attenuation lengths of majority and minority spins of hot electrons are expected as 40±5 and 16±1 Å in the single Co<subscript>90</subscript>Fe<subscript>10</subscript> layer, respectively. The decrease of transfer ratio was observed with decreasing base thickness from 80 to 30 Å, which may be related to the extension of the (Co<subscript>2</subscript>Si and Fe) intermediate region formed at Co<subscript>90</subscript>Fe<subscript>10</subscript>/Si interface in the thinner base layer. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 18905085
- Full Text :
- https://doi.org/10.1063/1.2126124