GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy.

Authors :: Niu, Z. C.
Zhang, S. Y.
Ni, H. Q.
Wu, D. H.
Zhao, H.
Peng, H. L.
Xu, Y. Q.
Li, S. Y.
He, Z. H.
Ren, Z. W.
Han, Q.
Yang, X. H.
Du, Y.
Wu, R. H.
Source :: Applied Physics Letters; 12/5/2005, Vol. 87 Issue 23, p231121, 3p, 1 Diagram, 3 Graphs
Publication Year :: 2005
Abstract: Starting from the growth of high-quality 1.3 μm GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm<superscript>2</superscript> with as-cleaved facet mirrors. [ABSTRACT FROM AUTHOR]

Subjects :: QUANTUM wells
ENERGY-band theory of solids
WAVELENGTHS
PHOTOLUMINESCENCE
DIODES
LASERS
MOLECULAR beam epitaxy

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