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Role of interfacial roughness on bias-dependent magnetoresistance and transport properties in magnetic tunnel junctions.
- Source :
- Journal of Applied Physics; 11/15/2005, Vol. 98 Issue 10, p103504, 3p, 3 Graphs
- Publication Year :
- 2005
-
Abstract
- The effects of metal-insulator interfacial roughness, modulated by Ar<superscript>+</superscript> irradiation, on bias dependence of tunnel magnetoresistance (TMR) and electrical transport of CoFe–AlO<subscript>x</subscript>–CoFe magnetic tunnel junctions (MTJs) have been studied. Reduction of TMR ratio and asymmetric TMR falloff curves as a function of dc bias have been observed for Ar<superscript>+</superscript>-irradiated MTJs. The results are analyzed by x-ray reflectivity together with complex impedance techniques, indicating interfacial roughness which likely results in a proportional rising trap state density (TSD). Increasing TSD for Ar<superscript>+</superscript>-irradiated MTJs increases an unpolarized current which decreases TMR ratio. The asymmetric TMR falloff curves are attributed to the different TSDs of bottom and top CoFe–AlO<subscript>x</subscript> interfaces in tunneling process. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 19214985
- Full Text :
- https://doi.org/10.1063/1.2132096