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Effect of F- and CH-Doped on Dielectric Properties of SiCOH FilmsDeposited by Decamethylcyclopentasiloxane Electron Cyclotron ResonancePlasma.
- Source :
- Chinese Physics Letters; Oct2005, Vol. 22 Issue 10, p2670-2673, 4p
- Publication Year :
- 2005
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 22
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 20152388