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Frequency and Bias-Dependent Modeling of Correlated Base and Collector Current RF Noise in SiGe HBTs Using Quasi-Static Equivalent Circuit.
- Source :
- IEEE Transactions on Electron Devices; Mar2006, Vol. 53 Issue 3, p515-522, 8p
- Publication Year :
- 2006
-
Abstract
- This paper presents modeling of correlated RF noise in the intrinsic base and collector currents of SiGe heterojunction bipolar transistors using quasi-static equivalent circuits. The noises are first extracted from measured noise parameters using standard noise circuit analysis. Using the extraction results, model equations are proposed to describe both the frequency and bias dependence of the correlated noise sources using a single set of model parameters. The model is demonstrated using noise data from both measurement and microscopic noise simulation. The model is shown to work at frequencies up to at least half of the peak f<subscript>T</subscript> and at biasing currents below high injection f<subscript>T</subscript> rolloff. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 20229911
- Full Text :
- https://doi.org/10.1109/TED.2005.863537