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Influence of annealing temperature on the band structure of sol-gel Ba0.65Sr0.35TiO3 thin films on n-type Si(100).
- Source :
- Applied Physics Letters; 3/27/2006, Vol. 88 Issue 13, p132907, 3p, 1 Chart, 4 Graphs
- Publication Year :
- 2006
-
Abstract
- The annealing temperature effect on the band structure of Ba<subscript>0.65</subscript>Sr<subscript>0.35</subscript>TiO<subscript>3</subscript> (BST) thin films coated on n-type Si(100) substrate was investigated by ellipsometry and x-ray photoelectron spectroscopy. The band energy shifts of sol-gel BST films annealed at different temperatures are dependent on their developed microstructure. Related to the amorphous BST films annealed at 600 °C, the polycrystalline BST film annealed at 700 °C exhibits narrow band gap, upwards-moved Fermi level, and downwards-moved conduction band minimum, which are believed to contribute the enhanced field emission of BST-coated Si field emitter arrays. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 88
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 20735856
- Full Text :
- https://doi.org/10.1063/1.2189828