Field assisted spin switching in magnetic random access memory.

Authors :: Jeong, W. C.
Park, J. H.
Oh, J. H.
Koh, G. H.
Jeong, G. T.
Jeong, H. S.
Kim, Kinam
Source :: Journal of Applied Physics; 4/15/2006, Vol. 99 Issue 8, p08H708, 3p, 2 Diagrams, 5 Graphs
Publication Year :: 2006
Abstract: A switching method called by field assisted spin switching has been investigated. A field assisted spin switching consists of a metal line induced magnetic field and a spin switching through a magnetic tunnel junction. It is a variation of a current induced switching and assisted by the magnetic field induced by the current-carrying metal line. Various current paths have been tested to investigate how and how much the spin switching contributes to the overall switching and the results will be explained. A computer simulation has been complemented to measure the degree of the thermal effect in the switching. [ABSTRACT FROM AUTHOR]