Characterization of Ti Schottky Diodes on Epi-Regrown 4H-SiC.

The electrical characteristics of Schottky diodes fabricated on n-type epi layers regrown over an n-drift layer and regrown over a drift layer with selective boron-implanted p-type regions have been evaluated and compared to those on virgin, as-grown commercial epi-drift layers. Slightly lower (0.1-0.2 eV) Schottky barrier heights and larger ideality factors (1.2 vs. 1.03) were extracted for the regrown diodes from forward current-voltage and capacitance-voltage measurements. Although more than 1-2 orders higher reverse leakage current were also observed, our epi-regrowth process is still considered adequate for novel power device realization. [ABSTRACT FROM AUTHOR]