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Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO2 substrates.
- Source :
- Applied Physics Letters; 5/22/2006, Vol. 88 Issue 21, p213507, 3p, 3 Graphs
- Publication Year :
- 2006
-
Abstract
- Polarization-sensitive photodetectors for the ultraviolet spectral range based on M-plane GaN films grown on LiAlO<subscript>2</subscript> substrates have been fabricated and characterized. These detectors exploit the dichroic properties of strained, M-plane GaN films. For a 400-nm-thick film, a maximum contrast of 7.25 between the detection of light polarized perpendicular and parallel to the c-axis is reached at 363 nm. Considerations for the detector design show that thin strained M-plane GaN films will enhance the polarization-sensitive bandwidth, while the maximum contrast can be obtained for relaxed thick films under weak signal detection conditions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 88
- Issue :
- 21
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 21845754
- Full Text :
- https://doi.org/10.1063/1.2206128