High-mobility transparent conductive Zr-doped In2O3.

Optical and electric properties in Zr-doped In₂O₃ epitaxial layers were systematically investigated. The films at Zr concentrations of 0.3–0.5 at. % are found to be superior transparent conductive oxides in transparency in near infrared wavelength region and Hall mobility compared to Sn-doped In₂O₃. Maximum mobilities are over 100 cm²/V s and corresponding carrier densities are approximately 1×10²⁰ cm^-3. From the relationship between the values of Hall mobility and carrier concentration of the epilayers, a number and/or effects of multicharged and neutral scattering centers of electrons seem to be reduced. [ABSTRACT FROM AUTHOR]