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Junction characteristics of SrTiO3 or BaTiO3 on p-Si (100) heterostructures.
- Source :
- Applied Physics Letters; 8/28/2006, Vol. 89 Issue 9, p092102, 3p, 1 Black and White Photograph, 3 Graphs
- Publication Year :
- 2006
-
Abstract
- The authors report the fabrication of p-n junctions, consisting of n-type SrTiO<subscript>3</subscript> or BaTiO<subscript>3</subscript> and p-type Si substrates, by the pulsed-laser deposition technique. The BaTiO<subscript>3</subscript>/Si junction exhibits excellent rectifying behavior and significantly reduced leakage current at 300 K exceeding breakdown voltage of -25 V with leakage current <0.5 μA, while SrTiO<subscript>3</subscript>/Si with an interfacial layer shows moderate junction characteristics. It was demonstrated that the BaTiO<subscript>3</subscript>/Si grown at an optimum growth temperature of 650 °C displayed superior performance which is promising for electronic devices. Both junctions show photocurrent at 300 K due to electron injection following the photoexcitation of n-type perovskite. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 22344825
- Full Text :
- https://doi.org/10.1063/1.2338764