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Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective.
- Source :
- IEEE Transactions on Electron Devices; Dec2006, Vol. 53 Issue 12, p3071-3079, 9p, 3 Diagrams, 13 Graphs
- Publication Year :
- 2006
-
Abstract
- Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting trade-off in the analog/RF design space. It is found that FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage, excellent subthreshold slope, and better voltage gain without degradation of noise or linearity. This makes them attractive for digital and low-frequency RF applications around 5 GHz, where the performance-power tradeoff is important. On the other hand, in high-frequency applications, planar bulk MOSFETs are seen to hold the advantage over FinFETs due to their higher peak transconductance. However, this comes at a cost of a reduced voltage gain of bulk MOSFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 23334380
- Full Text :
- https://doi.org/10.1109/TED.2006.885649