Performance Enhancement of the nMOSFET Low-Noise Amplifier by Package Strain.

Authors :: Hua, W.-C.
Chang, H.-L.
Wang, T.
Lin, C.-Y.
Lin, C.-P.
Lu, S. S.
Meng, C. C.
Liu, C. W.
Source :: IEEE Transactions on Electron Devices; Jan2007, Vol. 54 Issue 1, p160-162, 3p
Publication Year :: 2007
Abstract: The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is ∼0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NF reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions. [ABSTRACT FROM AUTHOR]