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Performance Enhancement of the nMOSFET Low-Noise Amplifier by Package Strain.
- Source :
- IEEE Transactions on Electron Devices; Jan2007, Vol. 54 Issue 1, p160-162, 3p
- Publication Year :
- 2007
-
Abstract
- The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is ∼0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NF reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 23593726
- Full Text :
- https://doi.org/10.1109/TED.2006.887194