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Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1.3 µm quantum dot lasers between 20 and 90°C.

Authors :
Ishida, M.
Hatori, N.
Otsubo, K.
Yamamoto, T.
Nakata, Y.
Ebe, H.
Sugawara, M.
Arakawa, Y.
Source :
Electronics Letters (Institution of Engineering & Technology); 2/15/2007, Vol. 43 Issue 4, p219-221, 3p, 3 Graphs
Publication Year :
2007

Abstract

Low-driving-current temperature-stable 10 Gbit/s direct modulation was achieved for optimised 200 µm-long short cavity 1.3 µm p-doped quantum dot lasers. Driving conditions were 25.2 mAp-p for the modulation current and 23.4 mA for the bias current through the whole temperature range from 20 to 90°C. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00135194
Volume :
43
Issue :
4
Database :
Complementary Index
Journal :
Electronics Letters (Institution of Engineering & Technology)
Publication Type :
Academic Journal
Accession number :
24029878
Full Text :
https://doi.org/10.1049/el:20073522