Ferroelectric and dielectric properties of Nd3+/Zr4+ cosubstituted Bi4Ti3O12 thin films.

Authors :: Zhong, X. L.
Wang, J. B.
Liao, M.
Sun, L. Z.
Shu, H. B.
Tan, C. B.
Zhou, Y. C.
Source :: Applied Physics Letters; 3/5/2007, Vol. 90 Issue 10, p102906-1, 3p, 5 Graphs
Publication Year :: 2007
Abstract: Thin films of Nd<superscript>3+</superscript>/Zr<superscript>4+</superscript> cosubstituted Bi<subscript>4</subscript>Ti<subscript>3</subscript>O<subscript>12</subscript> (BIT), i.e., Bi<subscript>3.15</subscript>Nd<subscript>0.85</subscript>Ti<subscript>2.8</subscript>Zr<subscript>0.2</subscript>O<subscript>12</subscript> (BNTZ), were fabricated on Pt/Ti/SiO<subscript>2</subscript>/Si(100) substrates by chemical solution deposition and annealed at different temperatures of 600, 650, 700, and 800 °C. The effects of annealing temperature on the microstructure, leakage current, ferroelectric, and dielectric properties of the BNTZ films were investigated in detail. Significantly, compared with the Bi<subscript>3.15</subscript>Nd<subscript>0.85</subscript>Ti<subscript>3</subscript>O<subscript>12</subscript> film, the BNTZ thin film has a lower coercive field (2E<subscript>c</subscript>) and leakage current density and a slightly larger remnant polarization (2P<subscript>r</subscript>). It shows that Nd<superscript>3+</superscript>/Zr<superscript>4+</superscript> cosubstitution in BIT film might be an effective way to improve ferroelectric properties of BIT. [ABSTRACT FROM AUTHOR]

Subjects :: THIN films
SOLID state electronics
TEMPERATURE
FERROELECTRICITY
DIELECTRICS
RESEARCH

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