Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence.

MLA

McNutt, Ty R., et al. “Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence.” IEEE Transactions on Power Electronics, vol. 22, no. 2, Mar. 2007, pp. 353–63. EBSCOhost, https://doi.org/10.1109/TPEL.2006.889890.

APA

McNutt, T. R., Hefner Jr., A. R., Mantooth, H. A., Berning, D., & Sei-Hyung Ryu. (2007). Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence. IEEE Transactions on Power Electronics, 22(2), 353–363. https://doi.org/10.1109/TPEL.2006.889890

Chicago

McNutt, Ty R., Allen R. Hefner Jr., H. Alan Mantooth, David Berning, and Sei-Hyung Ryu. 2007. “Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence.” IEEE Transactions on Power Electronics 22 (2): 353–63. doi:10.1109/TPEL.2006.889890.