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Self - Organized Si Dots On Ge Substrates.

Authors :
Pachinger, D.
Lichtenberger, H.
Schäffler, F.
Source :
AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p87-88, 2p, 4 Color Photographs
Publication Year :
2007

Abstract

The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0094243X
Volume :
893
Issue :
1
Database :
Complementary Index
Journal :
AIP Conference Proceedings
Publication Type :
Conference
Accession number :
24985421
Full Text :
https://doi.org/10.1063/1.2729783