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Spin Dynamics Controlled by Spin-Dependent Recombination in GaAsN alloys at Room Temperature.

Authors :
Kalevich, V. K.
Ivchenko, E. L.
Shiryaev, A. Yu.
Egorov, A. Yu.
Lombez, L.
Lagarde, D.
Marie, X.
Amand, T.
Source :
AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p1309-1310, 2p, 4 Graphs
Publication Year :
2007

Abstract

We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs1-xNx alloys with a small nitrogen content (x = 2.1, 2.7, 3.5%). It is found that the photoluminescence (PL) circular polarization reaches 40–45% and this giant value persists within 2 ns. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers. We have developed a nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers that describes the experimental dependencies, in particular, electron spin quantum beats observed in a transverse magnetic field. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0094243X
Volume :
893
Issue :
1
Database :
Complementary Index
Journal :
AIP Conference Proceedings
Publication Type :
Conference
Accession number :
24986048
Full Text :
https://doi.org/10.1063/1.2730383