Cite
Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25 nm Ni fully silicided gates.
MLA
Kittl, J. A., et al. “Direct Evidence of Linewidth Effect: Ni31Si12 and Ni3Si Formation on 25 Nm Ni Fully Silicided Gates.” Applied Physics Letters, vol. 90, no. 17, Apr. 2007, p. 172107. EBSCOhost, https://doi.org/10.1063/1.2732820.
APA
Kittl, J. A., Lauwers, A., Demeurisse, C., Vrancken, C., Kubicek, S., Absil, P., & Biesemans, S. (2007). Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25 nm Ni fully silicided gates. Applied Physics Letters, 90(17), 172107. https://doi.org/10.1063/1.2732820
Chicago
Kittl, J. A., A. Lauwers, C. Demeurisse, C. Vrancken, S. Kubicek, P. Absil, and S. Biesemans. 2007. “Direct Evidence of Linewidth Effect: Ni31Si12 and Ni3Si Formation on 25 Nm Ni Fully Silicided Gates.” Applied Physics Letters 90 (17): 172107. doi:10.1063/1.2732820.