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Top-emitting OLED pixel employing cathode-contact structure with a-Si:H thin-film transistors.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 5/24/2007, Vol. 43 Issue 11, p623-624, 2p, 3 Diagrams, 1 Graph
- Publication Year :
- 2007
-
Abstract
- An active-matrix organic light emitting diode (OLED) display employing a hydrogenated amorphous silicon thin-film transistor prefers a cathode-contact structure to an anode-contact structure. A new normal top-emitting OLED employing cathode-contact structure is proposed. To implement normal OLED structure, the cathode layer on top is separated as sub-pixels by a negative photoresist separator. The current of the cathode-contact structure is maintained 20% higher after 20 h than that of the anode-contact structure during the accelerated life test. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 43
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 25149538
- Full Text :
- https://doi.org/10.1049/el:20070706