Top-emitting OLED pixel employing cathode-contact structure with a-Si:H thin-film transistors.

An active-matrix organic light emitting diode (OLED) display employing a hydrogenated amorphous silicon thin-film transistor prefers a cathode-contact structure to an anode-contact structure. A new normal top-emitting OLED employing cathode-contact structure is proposed. To implement normal OLED structure, the cathode layer on top is separated as sub-pixels by a negative photoresist separator. The current of the cathode-contact structure is maintained 20% higher after 20 h than that of the anode-contact structure during the accelerated life test. [ABSTRACT FROM AUTHOR]