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Polar SiGe Class E and F Amplifiers Using Switch-Mode Supply Modulation.
- Source :
- IEEE Transactions on Microwave Theory & Techniques; May2007, Vol. 55 Issue 5, p845-856, 12p, 1 Diagram, 1 Chart, 1 Graph
- Publication Year :
- 2007
-
Abstract
- Two integrated polar supply-modulated class E and F power amplifiers (PAs) in 0.18-μm SiGe BiCMOS process are presented. The amplifiers are used to transmit GSM-EDGE signals with an envelope dynamic range of 11 dB and a frequency range of 880–915 MHz. The amplifiers use switch-mode dc-dc buck converters for supply modulation, where sigma-delta (ΣΔM), delta (ΔM), and pulsewidth modulation are used to modulate the PA amplitude signal. A framework has been developed for comparing the three switching techniques for EDGE implementation. The measurement results show that AM gives the highest efficiency and lowest adjacent channel power, providing class E and F PA efficiencies of 33% and 31%, respectively, at maximum EDGE output power. The corresponding class E and F linearized amplifiers' output spectra at 400-kHz offset are -54 and -57 dBc, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 55
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 25171750
- Full Text :
- https://doi.org/10.1109/TMTT.2007.895407