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AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor...
- Source :
- Journal of Applied Physics; 10/1/1997, Vol. 82 Issue 7, p3576, 5p, 2 Black and White Photographs, 1 Chart, 4 Graphs
- Publication Year :
- 1997
-
Abstract
- Reports on the growing of double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor on InGaAs substrates using molecular beam epitaxy. Use of strain compensated, AlGaInAs/GaAs superlattice for improved resistivity and breakdown; Obtaining of electrical and optical properties; Growing of PHEMT structures to reduce strain.
- Subjects :
- DOPED semiconductor superlattices
MOLECULAR beam epitaxy
ELECTRON mobility
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 82
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 25320
- Full Text :
- https://doi.org/10.1063/1.365676