Back to Search
Start Over
Thermoelectric Properties of Half-Heusler Bismuthides ZrCo1-xNixBi (x = 0.0 to 0.1).
- Source :
- Journal of Electronic Materials; Jul2007, Vol. 36 Issue 7, p732-735, 4p, 4 Graphs
- Publication Year :
- 2007
-
Abstract
- The usefulness of half-Heusler (HH) alloys as thermoelectrics has been mainly limited by their relatively large thermal conductivity, which is a key issue despite their high thermoelectric power factors. In this regard, Bi-containing half-Heusler alloys are particularly appealing, because they are, potentially, of low thermal conductivity. One such a material is ZrCoBi. We prepared pure and Ni-doped ZrCoBi by a solid-state reaction. To evaluate thermoelectric potential we measured electrical resistivity (ρ = 1/σ) and thermopower (σ) up to 1000 K and thermal conductivity (κ) up to 300 K. Our measurements indicate that for these alloys resistivity of approximately a few mΩ cm and thermopower larger than a hundred µV K<superscript>-1</superscript> are possible. Low κ values are also possible. On the basis of these data we conclude that this system has a potential to be optimized further, despite the low power factors (α²σT) we have currently measured. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 36
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 26201650
- Full Text :
- https://doi.org/10.1007/s11664-007-0153-1