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Thermoelectric Properties of Half-Heusler Bismuthides ZrCo1-xNixBi (x = 0.0 to 0.1).

Authors :
Ponnambalam, V.
Bo Zhang
Tritt, Terry M.
Poon, S. Joseph
Source :
Journal of Electronic Materials; Jul2007, Vol. 36 Issue 7, p732-735, 4p, 4 Graphs
Publication Year :
2007

Abstract

The usefulness of half-Heusler (HH) alloys as thermoelectrics has been mainly limited by their relatively large thermal conductivity, which is a key issue despite their high thermoelectric power factors. In this regard, Bi-containing half-Heusler alloys are particularly appealing, because they are, potentially, of low thermal conductivity. One such a material is ZrCoBi. We prepared pure and Ni-doped ZrCoBi by a solid-state reaction. To evaluate thermoelectric potential we measured electrical resistivity (ρ = 1/σ) and thermopower (σ) up to 1000 K and thermal conductivity (κ) up to 300 K. Our measurements indicate that for these alloys resistivity of approximately a few mΩ cm and thermopower larger than a hundred µV K<superscript>-1</superscript> are possible. Low κ values are also possible. On the basis of these data we conclude that this system has a potential to be optimized further, despite the low power factors (α²σT) we have currently measured. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
36
Issue :
7
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
26201650
Full Text :
https://doi.org/10.1007/s11664-007-0153-1