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Microstructure study of ZnO thin films on Si substrate grown by MOCVD.
- Source :
- Journal of Physics D: Applied Physics; Aug2007, Vol. 40 Issue 16, p4882-4886, 5p
- Publication Year :
- 2007
-
Abstract
- The microstructure of zinc oxide thin films on silicon substrates grown by metalorganic chemical vapour deposition (MOCVD) was characterized. The cross-sectional bright-field transmission electron microscopy (TEM) image showed that small ZnO columnar grains were embedded into large columnar grains, and the selected-area electron diffraction pattern showed that the ZnO/Si thin films were nearly c-axis oriented. The deviation angle along the ZnO (0?0?0?1) direction with respect to the growth direction of Si (1?0?0) was no more than 5°. The [0?0?0?1]-tilt grain boundaries in ZnO/Si thin films were investigated symmetrically by plan-view high resolution TEM. The boundaries can be classified into three types: low-angle boundaries described as an irregular array of edge dislocations, boundaries of near 30° angle with facet structures and large-angle boundaries with symmetric structure which could be explained by a low ? coincident site lattice structure mode. The research was useful to us for finding optimized growth conditions to improve ZnO/Si thin film quality. [ABSTRACT FROM AUTHOR]
- Subjects :
- ZINC oxide thin films
MICROSTRUCTURE
SILICON
CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 40
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 26270774
- Full Text :
- https://doi.org/10.1088/0022-3727/40/16/019