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Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films.
- Source :
- Applied Physics Letters; 8/13/2007, Vol. 91 Issue 7, p073511, 3p, 1 Diagram, 4 Graphs
- Publication Year :
- 2007
-
Abstract
- An organic bistable device with a structure Cu/Cu<subscript>2</subscript>S/copperphthalocyanine (Cu-Pc)/Pt was fabricated. Compared to the single layer organic device composed of Cu/Cu-Pc/Pt, the bilayer devices were observed to show distinct bistability with the resistance ratio of the off/on states up to 10<superscript>7</superscript> and low switch voltage (0.75–0.85 V). At least 10<superscript>5</superscript> switching cycles were achieved in the “write-read-erase-read” cycle voltage. The filament mechanism for the device is supported by the “metallic” behavior in their temperature dependence of the resistance in the on state. Such a memory device provides a promising structure for the nonvolatile memory. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 26370021
- Full Text :
- https://doi.org/10.1063/1.2771064