Energy characteristics of boron impurity in Si/Si1-xGex heterostructures with on-center and on-edge selective doping of quantum wells.

Authors :: Vainberg, V. V.
Gudenko, Yu. N.
Poroshin, V. N.
Tulupenko, V. N.
Cheng, N. N.
Yang, Z. P.
Mashanov, V.
Wang, K. Y.
Source :: Low Temperature Physics; Oct2007, Vol. 33 Issue 10, p869-871, 3p, 1 Diagram, 1 Chart, 2 Graphs
Publication Year :: 2007
Abstract: It is shown experimentally that when an acceptor impurity is shifted from the center to the edge of the quantum wells in Si/Si<subscript>1-x</subscript>Ge<subscript>x</subscript> heterostructures, the binding energy of the ground state of the impurity decreases and the radius of localization of the carriers increases. [ABSTRACT FROM AUTHOR]

Subjects :: BORON
SILICON
GERMANIUM
HETEROSTRUCTURES
QUANTUM wells
BINDING energy
RADIAL bone

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