Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz.

MLA

Poblenz, Christiane, et al. “Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz.” IEEE Electron Device Letters, vol. 28, no. 11, Nov. 2007, pp. 945–47. EBSCOhost, https://doi.org/10.1109/LED.2007.907266.

APA

Poblenz, C., Corrion, A. L., Recht, F., Chang Soo Suh, Rongming Chu, Shen, L., Speck, J. S., & Mishra, U. K. (2007). Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz. IEEE Electron Device Letters, 28(11), 945–947. https://doi.org/10.1109/LED.2007.907266

Chicago

Poblenz, Christiane, Andrea L. Corrion, Felix Recht, Chang Soo Suh, Rongming Chu, Likun Shen, James S. Speck, and Umesh K. Mishra. 2007. “Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz.” IEEE Electron Device Letters 28 (11): 945–47. doi:10.1109/LED.2007.907266.