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Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films.
- Source :
- Applied Physics Letters; 8/20/2007, Vol. 91 Issue 8, p082504, 3p, 3 Graphs
- Publication Year :
- 2007
-
Abstract
- Extensive structural and magnetic analyses of Hf<subscript>1-x</subscript>Co<subscript>x</subscript>O<subscript>2</subscript> thin films grown by molecular beam epitaxy are reported. Nearly cobalt cluster-free film with x=0.04–0.1 was obtained via 100 °C growth, and Co ions are inferred to be located at interstitial site. Ferromagnetic behavior was observed up to 300 K in both magnetization curves and temperature dependence of the moment. Via post-oxygen-annealing studies, a qualitative correlation between saturation magnetization and oxygen vacancy concentration is established, consistent with the impurity-band exchange model, and that the occurrence of ferromagnetic insulator behavior in the Co doped HfO<subscript>2</subscript> is more probable than Co doped ZnO, TiO<subscript>2</subscript>, and SnO<subscript>2</subscript> systems for doping concentrations under cation percolation threshold. [ABSTRACT FROM AUTHOR]
- Subjects :
- MOLECULAR beam epitaxy
EPITAXY
MOLECULAR beams
MAGNETISM
FERROMAGNETISM
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27758719
- Full Text :
- https://doi.org/10.1063/1.2773746