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Enhancement of field effect mobility of poly(3-hexylthiophene) thin film transistors by soft-lithographical nanopatterning on the gate-dielectric surface.
- Source :
- Applied Physics Letters; 11/26/2007, Vol. 91 Issue 22, p222108, 3p, 1 Chart, 4 Graphs
- Publication Year :
- 2007
-
Abstract
- The submicroscaled octadecyltrichlorosilane (OTS) line patterns on gate-dielectric surfaces were introduced into the fabrication of organic field effect transistors (OFETs). These spin-cast regioregular poly(3-hexylthiophene) films on soft-lithographically patterned SiO<subscript>2</subscript> surfaces yielded a higher hole mobility (∼0.072 cm<superscript>2</superscript>/V s) than those of unpatterned (∼0.015 cm<superscript>2</superscript>/V s) and untreated (∼5×10<superscript>-3</superscript> cm<superscript>2</superscript>/V s) OFETs. The effect of mobility enhancement as a function of the patterned line pitch was investigated in structural and geometric characteristics. The resulting improved mobility is likely attributed to the formation of efficient π-π stacking as a result of guide-assisted, local self-organization-involved molecular interactions between the poly(3-hexylthiophene) polymer and the geometrical OTS patterns. [ABSTRACT FROM AUTHOR]
- Subjects :
- THIN films
THIN film transistors
FIELD-effect transistors
SILICON compounds
POLYMERS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27798627
- Full Text :
- https://doi.org/10.1063/1.2818662