Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2.

Auger recombination is determined to be the limiting factor for quantum efficiency for InGaN–GaN (0001) light-emitting diodes (LEDs) at high current density. High-power double-heterostructure (DH) LEDs are grown by metal-organic chemical vapor deposition. By increasing the active layer thickness, DH LEDs can reach a maximum in quantum efficiency at current densities above 200 A/cm². Encapsulated thin-film flip-chip DH LEDs with peak wavelength of 432 nm have an external quantum efficiency of 40% and output power of 2.3 W at 2 A. [ABSTRACT FROM AUTHOR]