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Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111).
- Source :
- Applied Physics Letters; 11/12/2007, Vol. 91 Issue 20, p202909, 3p, 1 Black and White Photograph, 3 Graphs
- Publication Year :
- 2007
-
Abstract
- Cubic phase yttrium-doped HfO<subscript>2</subscript> (YDH) ultrathin films were grown on Si (111) substrates by molecular beam epitaxy. Thorough structural and morphological investigations by x-ray scattering and transmission electron microscopy reveal that the YDH thin films are epitaxially grown on the Si substrates with (111)<subscript>YDH</subscript>∥(111)<subscript>Si</subscript> and [10<OVERLINE>1</OVERLINE>]YDH∥[1<OVERLINE>1</OVERLINE>0]<subscript>Si</subscript>. The interface between YDH and Si is atomistic sharp and free of interfacial layer. We have also determined the yttrium content of YDH films to be 19% by using anomalous x-ray diffraction (AXD) across Y k edge and angle resolved x-ray photoelectron spectroscopy (AR-XPS). The agreement between the AXD and AR-XPS results manifests that the incorporated Y atoms homogeneously substitute Hf atoms in the crystalline lattice and form a substitutional solid solution. [ABSTRACT FROM AUTHOR]
- Subjects :
- YTTRIUM
HAFNIUM compounds
SILICON
MOLECULAR beam epitaxy
THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 20
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 28153794
- Full Text :
- https://doi.org/10.1063/1.2816121