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Atomic-layer-deposited nanostructures for graphene-based nanoelectronics.
- Source :
- Applied Physics Letters; 1/7/2008, Vol. 92 Issue 1, p013101, 3p, 1 Diagram, 2 Graphs
- Publication Year :
- 2008
-
Abstract
- Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 10<superscript>8</superscript> cm/s and a room-temperature mobility of >15 000 cm<superscript>2</superscript>/V s. How to grow gate dielectrics on graphene with low defect states is a challenge for graphene-based nanoelectronics. Here, we present the growth behavior of Al<subscript>2</subscript>O<subscript>3</subscript> and HfO<subscript>2</subscript> films on highly ordered pyrolytic graphite (HOPG) by atomic layer deposition (ALD). To our surprise, large numbers of Al<subscript>2</subscript>O<subscript>3</subscript> and HfO<subscript>2</subscript> nanoribbons, with dimensions of 5–200 nm in width and >50 μm in length, are observed on HOPG surfaces at growth temperature between 200 and 250 °C. This is due to the large numbers of step edges of graphene on HOPG surfaces, which serve as nucleation sites for the ALD process. These Al<subscript>2</subscript>O<subscript>3</subscript> and HfO<subscript>2</subscript> nanoribbons can be used as hard masks to generate graphene nanoribbons or as top-gate dielectrics for graphene devices. This methodology could be extended to synthesize insulating, semiconducting, and metallic nanostructures and their combinations. [ABSTRACT FROM AUTHOR]
- Subjects :
- CARBON
NANOSTRUCTURES
EPITAXY
HAFNIUM oxide
NUCLEATION
PROPERTIES of matter
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 92
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 28561315
- Full Text :
- https://doi.org/10.1063/1.2828338