Back to Search
Start Over
Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition.
- Source :
- Journal of Applied Physics; Feb2008, Vol. 103 Issue 3, p033708, 4p, 1 Diagram, 5 Graphs
- Publication Year :
- 2008
-
Abstract
- Smooth N-polar GaN/Al<subscript>x</subscript>Ga<subscript>1-x</subscript>N/GaN heterostructures with a different Al mole fraction were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates with a misorientation angle of 4° toward the a-sapphire plane. The sheet electron density of the two-dimensional electron gas (2DEG), which formed at the upper GaN/Al<subscript>x</subscript>Ga<subscript>1-x</subscript>N interface increased with an increasing Al-mole fraction in the Al<subscript>x</subscript>Ga<subscript>1-x</subscript>N layer and increasing silicon modulation doping, similar to the observations for Ga-polar heterostructures. The transport properties of the 2DEG, however, were anisotropic. The growth on vicinal substrates led to the formation of well ordered multiatomic steps during Al<subscript>x</subscript>Ga<subscript>1-x</subscript>N growth and the sheet resistance of the 2DEG parallel to the steps was about 25% lower than the resistance measured in the perpendicular direction. The fabricated devices exhibited a drain-source current, I<subscript>DS</subscript>, of 0.9 A/mm at a gate-source voltage +1 V. At a drain-source voltage of 10 V and I<subscript>DS</subscript>=300 mA/mm, current-gain and maximum oscillation frequencies of 15 and 38 GHz, respectively, were measured. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 30066044
- Full Text :
- https://doi.org/10.1063/1.2838214