Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC.

MLA

Chen, X. D., et al. “Electron Capture and Emission Properties of Interface States in Thermally Oxidized and NO-Annealed SiO2/4H-SiC.” Journal of Applied Physics, vol. 103, no. 3, Feb. 2008, p. 033701. EBSCOhost, https://doi.org/10.1063/1.2837028.

APA

Chen, X. D., Dhar, S., Isaacs-Smith, T., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2008). Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC. Journal of Applied Physics, 103(3), 033701. https://doi.org/10.1063/1.2837028

Chicago

Chen, X. D., S. Dhar, T. Isaacs-Smith, J. R. Williams, L. C. Feldman, and P. M. Mooney. 2008. “Electron Capture and Emission Properties of Interface States in Thermally Oxidized and NO-Annealed SiO2/4H-SiC.” Journal of Applied Physics 103 (3): 033701. doi:10.1063/1.2837028.