Tuning the intersubband absorption in strained AlAsSb/InGaAs quantum wells towards the telecommunications wavelength range.

Authors :: Cristea, P.
Fedoryshyn, Y.
Holzman, J. F.
Robin, F.
Jäckel, H.
Müller, E.
Faist, J.
Source :: Journal of Applied Physics; 12/1/2006, Vol. 100 Issue 11, p116104, 3p, 1 Diagram, 4 Graphs
Publication Year :: 2006
Abstract: We study the intersubband absorption in Si doped AlAsSb/InGaAs quantum wells (QWs) grown on InP substrates by molecular beam epitaxy. The investigated multiple QW structures contain strained In<subscript>0.78</subscript>Ga<subscript>0.22</subscript>As layers and additional AlAs layers for strain compensation. By varying the nominal QW width from 3 to 9 ML (monolayer) a minimum central absorption wavelength of 1.76 μm is found for a 5 ML thick QW. Simulations of these experimental results using a self-consistent Schrödinger-Poisson solver show a deviation from the perfect squarelike potential caused by intermixing effects at the interfaces. These blurred interfaces are also revealed by transmission electron microscopy measurements. [ABSTRACT FROM AUTHOR]

Subjects :: ELECTRON microscopy
ABSORPTION
EPITAXY
CRYSTAL growth
QUANTUM wells
PARTICLES (Nuclear physics)

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