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Optical band gap of BiFeO3 grown by molecular-beam epitaxy.
- Source :
- Applied Physics Letters; 4/7/2008, Vol. 92 Issue 14, p142908, 3p, 3 Graphs
- Publication Year :
- 2008
-
Abstract
- BiFeO<subscript>3</subscript> thin films have been deposited on (001) SrTiO<subscript>3</subscript> substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO<subscript>3</subscript> films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO<subscript>3</subscript> films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 92
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 31739320
- Full Text :
- https://doi.org/10.1063/1.2901160