Characterization of the crystallographic microstructure of the stress-induced void in Cu interconnects.

Stepwise cross-sectional crystallographic measurement was performed on the stress-induced void (SIV) of copper interconnect and it was possible to investigate the three-dimensional crystallographic structures near the submicron scale void. The void mainly happened at a triple junction of grain boundaries and there were at least two grains with high biaxial elastic modulus near the triple junction. The preferred site for the SIV could well be understood by considering the elastic anisotropy of each grain and the grain boundary type. [ABSTRACT FROM AUTHOR]