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Structural characteristics of GeTe-rich GeTe–Sb2Te3 pseudobinary metastable crystals.
- Source :
- Journal of Applied Physics; May2008, Vol. 103 Issue 9, p093511, 9p, 2 Diagrams, 3 Charts, 6 Graphs
- Publication Year :
- 2008
-
Abstract
- The (GeTe)<subscript>1-γ</subscript>–(Sb<subscript>2</subscript>Te<subscript>3</subscript>)<subscript>γ</subscript> pseudobinary system has, over almost its entire composition range, two kinds of crystalline phase: one is a metastable phase with a NaCl-type structure and the other is a spectrum of stable phases with homologous structures. In the metastable phase, Ge/Sb atoms and intrinsic vacancies occupy the Na sites; on the other hand, Te atoms are located at the Cl sites. These vacancies are produced by following γ/1+2γ to ensure the stoichiometry of the metastable pseudobinary compound. This metastable phase obstinately holds its NaCl-type structure and resists transformation to stable homologous structures, even at high temperatures on the GeTe-rich side of the system. In GeTe (γ=0), the NaCl-type atomic configuration itself is the stable structure. GeTe has, as is well known, a high-temperature cubic phase and a low-temperature rhombohedral phase. This GeTe and the pseudobinary compounds containing a small quantity of Sb<subscript>2</subscript>Te<subscript>3</subscript> have their single-phase regions not on the GeTe–Sb<subscript>2</subscript>Te<subscript>3</subscript> tie line but at Ge-poor sides off the line: in other words, the Na sites of these off-stoichiometric compounds have some excess vacancies besides the intrinsic vacancies. As Sb<subscript>2</subscript>Te<subscript>3</subscript> is further added to GeTe, however, the structural transformation temperature continuously falls and the single-phase region converges on the tie line as the excess vacancies at the Na site disappear, which change its electrical property from metallic to semiconducting conductivity. The low-temperature rhombohedral phase is present up to near γ=0.14. The NaCl-type metastable phase becomes unstable with increased Sb<subscript>2</subscript>Te<subscript>3</subscript>; after subjecting the compound Ge<subscript>8</subscript>Sb<subscript>2</subscript>Te<subscript>11</subscript> (γ=0.11) to heat treatment for 15 days at 773 K, a stable homologous structure appeared. [ABSTRACT FROM AUTHOR]
- Subjects :
- PHYSICAL & theoretical chemistry
HEATING equipment
STOICHIOMETRY
ABSORPTION
PHYSICS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 32078990
- Full Text :
- https://doi.org/10.1063/1.2901187