Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP2.

Results of studies of electrical properties of structures including metal-conducting oxide (ITO), and β-ZnP₂ semiconductor of n-type conductivity are reported. It is established that the total resistance of the structures under study is determined by deep levels of intrinsic defects in the band gap of semiconductor. Long-term relaxation of capacitance and conductivity is observed after switching off the reverse bias at low temperatures, which is associated with restoration of the nonequilibrium charge in the space-charge region. Models of processes in which experimental results are interpreted satisfactorily are constructed. [ABSTRACT FROM AUTHOR]