Crystalline and dielectric properties of sputter deposited PbTiO3 thin films.

The crystalline and dielectric properties of sputter deposited PbTiO₃ thin films were investigated as a function of the film thickness and growth temperature. The crystalline quality was found to be independent of the film thickness from 2.4 to 200 nm. The capacitance of 0.12 mm² Pt/PbTiO₃/SrRuO₃ and Pt/PbTiO₃/Nb:SrTiO₃ capacitors was found to deviate from the ideal parallel plate capacitance for PbTiO₃ films thinner than 10 nm. The decrease in capacitance was consistent with field penetration into the electrodes. The surface Pb content, as determined from x-ray photoelectron spectroscopy, was found to decrease with increasing growth temperature from 700 to 760 °C. However, no change could be observed in the crystalline quality. [ABSTRACT FROM AUTHOR]