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Erratum for ‘High-power InGaAs/GaAs 1.3 µm VCSELs based on novel electrical confinement scheme’.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 6/19/2008, Vol. 44 Issue 13, p832-832, 1p
- Publication Year :
- 2008
-
Abstract
- A correction to the article "High-Power InGaAs/GaAs 1.3 μm VCSELs Based on Novel Electrical Confinement Scheme," that was published in the June 12, 2003 issue is presented.
- Subjects :
- ELECTRONICS
Subjects
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 44
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 32706416
- Full Text :
- https://doi.org/10.1049/el:20081538