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Imaging of interstitial atoms in Ga1-xMnxAs layers by means of X-ray diffuse scattering.
- Source :
- Journal of Applied Crystallography; Jun2008, Vol. 41 Issue 3, p544-547, 4p, 1 Chart, 2 Graphs
- Publication Year :
- 2008
-
Abstract
- The local atomic structure of a Ga<subscript>1-x</subscript>Mn<subscript>x</subscript>As (x = 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of atoms that changed concentration and identified them to be exclusively interstitial atoms at the centres of gallium and/or arsenic tetrahedra in the GaMnAs unit cell. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218898
- Volume :
- 41
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Applied Crystallography
- Publication Type :
- Academic Journal
- Accession number :
- 34016668
- Full Text :
- https://doi.org/10.1107/S0021889808007309