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A Novel 1200-V LDMOSFET With Floating Buried Layer in Substrate.
- Source :
- IEEE Electron Device Letters; Jun2008, Vol. 29 Issue 6, p645-647, 3p, 1 Chart, 3 Graphs
- Publication Year :
- 2008
-
Abstract
- A novel 2-μm thin-drift-layer power MOSFET with an n-type floating buried layer (FBL) in substrate is proposed in this letter. Since the charges in the buried layer modulate the bulk electric field, a nearly uniform electric field is obtained, and the vertical breakdown voltage (BV) is significantly improved. Simulation results show that the BV of the proposed FBL lateral double-diffused MOSFET (LDMOSFET) is increased from 743 V of the conventional LDMOSFET to 1332 V with the same 100 μm drift region length. Furthermore, the figure-of-merit of the FBL-LDMOSFET is better than that of the conventional LDMOSFET. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 29
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 34128794
- Full Text :
- https://doi.org/10.1109/LED.2008.922731