Source/Drain Series-Resistance Effects in Amorphous Gallium—Indium Zinc-Oxide Thin Film Transistors.

In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm² / V · s. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 µm from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes. [ABSTRACT FROM AUTHOR]