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Charging effect of Al2O3 thin films containing Al nanocrystals.
- Source :
- Applied Physics Letters; 10/6/2008, Vol. 93 Issue 14, p142106, 3p, 4 Graphs
- Publication Year :
- 2008
-
Abstract
- In this work, Al<subscript>2</subscript>O<subscript>3</subscript> thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al<subscript>2</subscript>O<subscript>3</subscript> thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al. [ABSTRACT FROM AUTHOR]
- Subjects :
- NANOCRYSTALS
THIN films
ALUMINUM
SPUTTERING (Physics)
ELECTRIC resistance
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 93
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 34850460
- Full Text :
- https://doi.org/10.1063/1.2994695