Magnetic polaron for a spin memory application.

A memory concept based on the interfacial exchange energy between itinerant holes in a quantum dot and magnetic ions in an adjacent magnetic insulator is theoretically investigated. A model based on the free energy analysis demonstrates the existence of bistable states through the mechanism of bound collective magnetic polaron, whose formation and dissolution can be controlled electrically via a gate bias pulse. The parameter window suitable for bistability is discussed along with the conditions that support maximum nonvolatility. The analysis is extended to the influence of material choices as well as different designs. The calculation results clearly indicate the possibility of room temperature operation, given the availability of insulating ferromagnetic or antiferromagnetic materials whose Curie temperature is above room temperature. [ABSTRACT FROM AUTHOR]