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Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer.
- Source :
- Applied Physics Letters; 10/27/2008, Vol. 93 Issue 17, p172109, 3p, 4 Graphs
- Publication Year :
- 2008
-
Abstract
- A fully transparent nonvolatile memory with the conventional sandwich gate insulator structure was demonstrated. Wide band gap amorphous GaInZnO (a-GIZO) thin films were employed as both the charge trap layer and the transistor channel layer. An excellent program window of 3.5 V with a stressing time of 100 ms was achieved through the well-known Fowler–Nordheim tunneling method. Due to the similar energy levels extracted from the experimental data, the asymmetrical program/erase characteristics are believed to be the result of the strong trapping of the injected negative charges in the shallow donor levels of the GIZO film. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 93
- Issue :
- 17
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 35279074
- Full Text :
- https://doi.org/10.1063/1.3012386