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Realization of High Voltage (> 700 V) in New SOT Devices With a Compound Buried Layer.
- Source :
- IEEE Electron Device Letters; Dec2008, Vol. 29 Issue 12, p1395-1397, 3p, 5 Graphs
- Publication Year :
- 2008
-
Abstract
- A novel silicon-on-insulator (SOl) high-voltage de- vice with a compound buried layer (CBL SOl) consisting of two oxide layers and a polysilicon layer between them is proposed. Its breakdown characteristic is investigated theoretically and experimentally. Theoretically, its vertical breakdown voltage (BV) is shared by two oxide layers; furthermore, the electric field in the lower buried oxide layer of E12 is increased from about 78 to 454 V/jtm by holes collected on the bottom interface of the polysilicon. Both result in an enhanced BY. Experimentally, 762-V SO! diode is obtained. The maximal temperature of CBL SO! diode is reduced by 16.9 K because a window in the upper buried oxide layer alleviates the self-heating effect. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 29
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 35718944
- Full Text :
- https://doi.org/10.1109/LED.2008.2007307