Realization of High Voltage (> 700 V) in New SOT Devices With a Compound Buried Layer.

A novel silicon-on-insulator (SOl) high-voltage de- vice with a compound buried layer (CBL SOl) consisting of two oxide layers and a polysilicon layer between them is proposed. Its breakdown characteristic is investigated theoretically and experimentally. Theoretically, its vertical breakdown voltage (BV) is shared by two oxide layers; furthermore, the electric field in the lower buried oxide layer of E12 is increased from about 78 to 454 V/jtm by holes collected on the bottom interface of the polysilicon. Both result in an enhanced BY. Experimentally, 762-V SO! diode is obtained. The maximal temperature of CBL SO! diode is reduced by 16.9 K because a window in the upper buried oxide layer alleviates the self-heating effect. [ABSTRACT FROM AUTHOR]