Back to Search Start Over

Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge.

Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge.

Authors :
Yu, H. Y.
Chang, S. Z.
Aoulaiche, M.
Wang, X. P.
Adelmann, C.
Kazer, B.
Absil, P.
Lauwers, A.
Biesemans, S.
Source :
Applied Physics Letters; 12/29/2008, Vol. 93 Issue 26, p263502, 3p, 1 Diagram, 3 Graphs
Publication Year :
2008

Abstract

The mechanism governing threshold voltage (V<subscript>t</subscript>) modulation in NiSi/SiON n-channel metal-oxide-semiconductor field-effect transistors when doping with rare-earth elements (dysprosium or Dy in this work) is studied. In addition to the widely reported interface dipole theory, this letter provides additional evidence that the bulk trapping charges (related to the unintermixed Dy<subscript>2</subscript>O<subscript>3</subscript> layer after device fabrication) can play an important role in determining the device V<subscript>t</subscript> for the above-mentioned gate stacks. It is thus suggested that a careful design of the capping layer thickness and the thermal budget for intermixing the capping layer with host dielectrics is necessary to eliminate the impact from bulk trapping charges to the device performance. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
93
Issue :
26
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
36054087
Full Text :
https://doi.org/10.1063/1.3058695